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- A new, ultra-tough material could transform laptops and other personal electronics.
- The material called 2DPA-1 is so strong it might even be able to support a building.
- Other new materials could create sensors that let our phones know more about our surrounding environment.
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Early in the year, everyone expected that the availability of COVID vaccines would signal the start of a return to normal, but that has certainly not been the case. Now the industry is taking a longer-term view about how to transform business, what is necessary for people to maintain their mental health, and how to create robust hybrid work environments for the future that do not discard the positives of a work-from-home period.

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Stacked nanosheet transistors promise to extend silicon’s reign beyond the finFET era. Put in perspective, 2D semiconductors have a long way to go. While silicon nanosheets are optimizing potential manufacturing processes, TMD semiconductor researchers are still answering questions about film fabrication and contact formation. As shrinking transistors demand thinner and thinner channels, though, the opportunity for 2D materials eventually will come.

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Technologies such as gate-all-around FETs and neuromorphic analog memory will increase speed and reduce power consumption in the chiplets that control artificial intelligence of things devices and systems.

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Novel properties of 2D materials can create smaller, lower-powered logic and memory devices for commercial manufacturing of integrated circuits (IC). The ongoing challenge for High-Volume Manufacturing (HVM) is to find the right precursor materials and process recipes to stack one atomic layer at a time across silicon wafers using Original Equipment Manufacturer (OEM) tools.

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The ferroelectric effect in materials has been exploited to fabricate (fab) reliable Ferroelectric Random Access Memories (FRAM) Non-Volatile Memory (NVM) ICs for over 20 years. Recent years have seen have seen a breakthrough in discovering ferroelectric properties in Hafnium Oxide (HfO2 or “hafnia”), a fab-friendly material unlike previous perovskite-based materials like Lead Zirconate Titanate (PZT). This has the potential to revolutionize on-chip memory technology and to enable next-generation technologies such as artificial synapses for compute-in-memory (CIM) type neuromorphic ICs.

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The need for more energy-efficient automated inference in our world requires innovation to facilitate Sensing-to- Action and true edge intelligence for the AIoT. Analog neuromorphic ICs should consume a thousand- to a million times less energy compared to the best digital AI chips today. Leading semiconductor fabricators are in hot pursuit of new analog materials, processes and devices to find the foundations for future ML and AI systems.

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Physica Status Solidi (RRL)-Rapid Research Letters – May 17, 2021

We take great pleasure to present this Focus Issue in Physica Status Solidi (RRL) – Rapid Research Letters on two classes of novel ferroelectrics with rich physics and high application potential: fluorite- and wurtzite-type ferroelectrics with HfO2/ZrO2 and Al(Sc)N as their most prominent representatives.

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Earlier in 2019, phase change memory (PCRAM) was touted as one of three emerging memories to watch. Intermolecular's CTO Karl Littau said PCRAM still doesn’t scale as well as the manufacturing technologies for vertical 3D NAND because it must be built up layer by layer, each with its own critical lithography and etching steps

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