Technical presentations
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Tuning Coercive Field and Polarization in Inherently Ferroelectric HZO Film deposited
Presented at ALD in June 2021 in San Jose (CA, United States)
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ALD GeAsSeTe Ovonic Threshold Switch for 3D Stackable Crosspoint memory
Presented at International Memory Workshop (IMW) in May 2020 in the United States
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Oxidation Influences Etch Quality in the Low-Temperature Thermal ALE of Co
Presented by Martin McBriarty in June 2021 in the United States
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Leakage variation with Aspect Ratio in ALD High-k ZrO2 Dielectrics
Presented by Martin McBriarty in June 2020 in the United States
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Inherently Ferroelectric Films by ALD Using ZrD-04 and HfD-04
Presented by Vijay Narasimhan in August 2020 in the United States
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ADVANCED PHOTORESISTS FOR THE MORE-THAN-MOORE INDUSTRY
The megatrends of mobile applications and smart cars are enabled by leading manufacturers of devices such as RF components, MEMS, Power ICs - just to mention a few. Improvements in performance and integration requirements urge advancements in technology, in chip design, and manufacturing processes. Thereby, lithography plays a key role and new, process specific needs emerge that call for new solutions. This talk will provide insights into our recent developments in photoresist which are specifically designed to meet the needs of the More-than-Moore industry.
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AQUEOUS MATERIALS FOR ADVANCED LITHOGRAPHY
We provide a broad material portfolio enabling advanced photolithography. Rinse material is a unique offering to alleviate capillary force hence mitigate pattern collapse in very fine photoresist pattern through reducing surface tension with novel surfactants. Based on the knowledge and know-hows acquired in the development of rinse materials for ArF dry/immersion lithography processes in the past decades, new material platforms have been developed to extend the technique to meet the ever critical requirements in the era of EUV lithography. We are committed to providing novel solutions to confront the increasing technical challenges in advanced patterning.
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