显示 1 - 10 条结果，共 11 条结果。
-
HtB-Octane
Hafnium Tetiary Butoxide-Octane(HtB-Octane) is a liquid source material for HfO2 gate dielectric.
High-kMetal OxidesChinaEuropeJapanKoreaTaiwanLogicSemiconductors -
TDMAZr
TDMAZr is typically used for zirconium oxide ALD or PE-ALD depositions.
High-kMetal OxidesChinaEuropeJapanKoreaTaiwanLogicSemiconductors -
TDMAHf
Tetrakis dimethylamido hafnium(TDMATHf) is a liquid source material for ALD or MOCVD of high-k gate dielectirc deposition.
High-kMetal OxidesChinaEuropeJapanKoreaTaiwanLogicSemiconductors -
TAETO
TAETO is mainly used for CVD or ALD tantalum(V) oxide thin-film depositions.
Metal OxidesChinaEuropeJapanKoreaTaiwanLogicSemiconductors -
ZrCl4
ZrCl4 is r solid ALD precursor for high-k material Zirconium Oxide (ZrO2) deposition.
Metal OxidesChinaEuropeJapanKoreaTaiwanLogicSemiconductors -
HfCl4 ─ Hafnium tetrachloride
Hafnium tetrachloride (HfCl4) is a solid source material for the atomic layer Thin Film Deposition (ALD) of hafnium oxide films.
High-kMetal OxidesChinaEuropeJapanKoreaTaiwanLogicSemiconductors -
TDEAZr
TDEAZr is typically used for zirconium oxide ALD or PE-ALD depositions.
High-kMetal OxidesChinaEuropeJapanKoreaTaiwanLogicSemiconductors -
TMA
TMA is the most widely used aluminum precursor for MOVPE, CVD, or ALD processes for Si semiconductor, LED, III-V solar, Laser diode and other compound semiconductor devices.
High-kMetal OxidesChinaEuropeJapanKoreaTaiwanLogicSemiconductors -
TBTDET
TBTDET is a liquid precursor for CVD or ALD tantalum oxide and tantalum nitride thin films depositions.
High-kMetal NitridesMetal OxidesChinaEuropeJapanKoreaTaiwanLogicSemiconductors -
TEMATi
TEMATi is a liquid chemical source for CVD titanium nitride film depositions.
High-kMetal OxidesChinaEuropeJapanKoreaTaiwanLogicSemiconductors