显示 1 - 9 条结果，共 9 条结果。
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PDMAT
Pentakis(dimethylamino) tantalum, PDMAT is a soild tantalum precursor for TaN barrier layers to prevent copper diffusion in semiconductor application.
Deposition - Metal HardmaskMetal HardmasksMetal NitridesMetalsChinaEuropeJapanKoreaTaiwanLogicSemiconductorsTantalum -
TDMAT
TDMAT is a liquid chemical source suitable for the chemical vapor deposition of titanium nitride films. TiN films are effective diffusion barriers for IC applications.
Deposition - Metal HardmaskHardmasksMetal HardmasksMetal NitridesChinaEuropeJapanKoreaTaiwanDisplayLogicSemiconductors -
TiCL4 ─ Titanium Tetrachloride
Titanium Tetrachloride (TiCl4) is a liquid source material for the chemical vapor Thin Film Deposition (CVD) of titanium nitride, titanium dioxide and titanium metal.
Metal NitridesChinaEuropeJapanKoreaTaiwanLogicSemiconductors -
TEMAHf
Tetrakis(ethylmethylamido)hafnium(TEMAHf) is a liquid source material for ALD of the high-k gate rielectric such as HfO2 and HfxNy.
Deposition - Metal HardmaskMetal HardmasksMetal NitridesChinaEuropeJapanKoreaTaiwanLogicSemiconductors -
TDEAT
TDEAT is a titanium source for the deposition of TiN barrier layers or TiO films via CVD and ALD processes.
Metal NitridesChinaEuropeJapanKoreaTaiwanLogicSemiconductors -
TBTEMT
TBTEMT is a liquid precursor for CVD or ALD tantalum oxide and nitride thin films depositions.
Metal NitridesChinaEuropeJapanKoreaTaiwanLogicSemiconductors -
WNBURE
WNBURE is a liquid tungsten precursor for WN or WCN deposition in semiconductor application.
Deposition - Metal HardmaskMetal HardmasksMetal NitridesChinaEuropeJapanKoreaTaiwanLogicSemiconductorsTungsten -
TaCl5
TaCl5 is a solid ALD precursor for deposition of Tantalum Nitride films.
Metal NitridesChinaEuropeJapanKoreaTaiwanLogicSemiconductors -
TBTDET
TBTDET is a liquid precursor for CVD or ALD tantalum oxide and tantalum nitride thin films depositions.
High-kMetal NitridesMetal OxidesChinaEuropeJapanKoreaTaiwanLogicSemiconductors