Diethoxymethylsilane (DEMS®) Precursor is used as a silicon source for the chemical vapor deposition of high quality low constant films and silicon dioxide films.
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Diethoxymethylsilane (DEMS®) Precursor is used as a silicon source for the chemical vapor deposition of high quality low constant films and silicon dioxide films.
Diethoxymethylsilane (DEMS®) Precursor is used as a silicon source for the chemical vapor deposition of high quality low constant films and silicon dioxide films. When used in the PDEMS® ILD process, it can be used to deposit ultra-low k films with k -2.5 and below.
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